(China (Mainland))
Product Summary
The 2MBI600NT060 is an insulated gate bipolar transistor. The applications of the 2MBI600NT060 include high power switching, A.C. motor controls, D.C. motor controls, uninterruptible power supply.
Parametrics
2MBI600NT060 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 600V; (2)Gate -Emitter Voltage, VGES: ±20V; (3)Collector Current: Continuous, IC: 600A; 1ms, IC PULSE: 1200A; Continuous, -IC: 600A; 1ms, -IC PULSE: 1200A; (4)Max. Power Dissipation, PC: 2100 W; (5)Operating Temperature, Tj: +150 ℃; (6)Storage Temperature, Tstg: －40 ~ +125 ℃; (7)Isolation Voltage, A.C. 1min., Vis: 2500 V; (8)Screw Torque, Mounting 1: 3.5Nm; Terminals 2: 4.5Nm.
Features
2MBI600NT060 features: (1)Square RBSOA; (2)Low saturation voltage; (3)Less total power dissipation; (4)Improved FWD characteristic; (5)Minimized internal stray inductance; (6)Overcurrent limiting function (~3 times rated current).
Diagrams
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2MBI100NC-120 |
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2MBI100NE-120 |
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2MBI100P-140 |
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2MBI100PC-140 |
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Negotiable |
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