Product Summary

The BSM100GB170DN2 is an IGBT power module.

Parametrics

BSM100GB170DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1700 V; (2)Collector-gate voltage VCGR: 1700V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 100A at TC = 25℃; 145A at TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 190A at TC = 25℃; 200A atTC = 80℃; (6)Power dissipation per IGBT, Ptot: 1000W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -40 to + 125℃.

Features

BSM100GB170DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)RG on,min = 15 Ohm.

Diagrams

BSM100GB170DN2 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM100GB170DN2
BSM100GB170DN2

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Data Sheet

0-6: $101.41
6-10: $91.27
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Data Sheet

0-1: $49.93
1-5: $47.43
5-10: $44.93
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Data Sheet

0-1: $82.74
1-10: $74.47