(China (Mainland))
Product Summary
The BSM15GD120DN1 is an IGBT Power Module.
Parametrics
BSM15GD120DN1 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 15V when TC=80℃; 25A when TC=25℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 30V when TC=80℃; 50A when TC=25℃; (6)Power dissipation per IGBT TC = 25℃, Ptot: 145W; (7)Chip temperature, Tj: +150℃; (8)Storage temperature, Tstg: -55 to + 150℃; (9)Thermal resistance, chip case, RthJC: ≤0.86 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤1.5 K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56 sec.
Features
BSM15GD120DN1 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
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 BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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