Product Summary
The FZ400R33KF2 is an IGBT module.
Parametrics
FZ400R33KF2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, IC: 50A; (5)Pulsed collector current, ICpuls: 100A; (6)Power dissipation, Ptot: 400W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃.
Features
FZ400R33KF2 features: (1)Single switch with chopper diode at collector; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
FZ400R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
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FZ400R12KE3B1 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 650A |
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FZ400R12KE3S |
Infineon Technologies |
IGBT Transistors 1200V 400A SINGLE |
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FZ400R12KE4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 400A |
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FZ400R12KP4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 400A |
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FZ400R12KS4 |
Infineon Technologies |
IGBT Modules IGBT-Module/ IGBT-inverter |
Data Sheet |
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