(China (Mainland))
Product Summary
The bsm75gb120dn2 is an IGBT Power Module.
Parametrics
bsm75gb120dn2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 105A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 210A; (6)Power dissipation per IGBT: 625W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -55 to + 150℃; (9)Thermal resistance, chip case RthJC≤ 0.2 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.5K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec.
Features
bsm75gb120dn2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BSM75GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
Data Sheet |
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BSM75GB120DN2_E3223 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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BSM75GB120DN2_E3223c-Se |
Infineon Technologies |
IGBT Modules IGBT 1200V 75A |
Data Sheet |
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