(China (Mainland))
Product Summary
The 7MBR75U4B120-50 is a Power Integrated Module.
Parametrics
7MBR75U4B120-50 absolute maximum ratings: (1)Collector-Emitter voltage: 1200 V; (2)Gate-Emitter voltage: ±20 V; (3)Collector current: 75 A at Tc=25℃, 50 A at Tc=80℃; (4)Collector Power Dissipation: 275 W at 1 device; (5)Collector-Emitter voltage: 1200 V; (6)Gate-Emitter voltage: ±20 V; (7)Collector current: 35 A at Tc=25℃, 25 A at Tc=80℃; (8)Repetitive peak reverse Voltage (Diode): 1200 V.
Features
7MBR75U4B120-50 electrical characteristics: (1)Zero gate voltage Collector current: 1.0 mA at VGE = 0V, VCE = 1200V; (2)Gate-Emitter leakage current: 200 nA at VCE = 0V, VGE=±20V; (3)Gate-Emitter threshold voltage: 4.5 to 8.5 V at VCE = 20V, Ic = 75mA; (4)Input capacitance: 6 nF at VCE=10V,VGE=0V,f=1MHz; (5)Turn-on time: 1.20 μs at Vcc = 600V; (6)Turn-off time: 1.00 μs at Ic = 75A; (7)Forward on voltage: 2.45 V at VGE=0V, 2.10 V at IF = 75A.
Diagrams
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